The data revealed that the universal scaling relationship between HO* and HOO* intermediates is still present and robust, despite the variety in methods and structures used for calculating the binding energies of the intermediates. On the other hand, the data did not show a clear trend line regarding the O* binding. Our analysis suggested that trends in doped semiconducting oxides behave very differently from those in other oxides. This points towards a computational challenge in describing doped oxides in a realistic manner. We propose a way to overcome these computational challenges, which can be applied to simulations corresponding to doped semiconductors in general.
Spyridon Divanis, Tugce Kutlusoy, Ida Marie Ingmer Boye, Isabela Costinela Man and Jan Rossmeisl
CHEMICAL SCIENCE, Volume: 11 Issue: 11 Pages: 2943-2950
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